Linear Collider Signals of Anomaly Mediated Supersymmetry Breaking

Diagnostic signals of the minimal model of anomaly mediated supersymmetry breaking are discussed in the context of a $\sqrt{s}$ = 1 TeV $e^+e^-$ linear collider.Comment: Talk given at SUSY'01, Dubna, Russia, June 11-17, 2001. 4 pages, LaTeX, 1 postscript figure. Style file include

Higgs boson mass, neutrino masses and mixing and keV dark matter in an U(1)R−U(1)_R- lepton number model

We discuss neutrino masses and mixing in the framework of a supersymmetric model with an $U(1)_{R}$ symmetry, consisting of a single right handed neutrino superfield with an appropriate R charge. The lepton number ($L$) of the standard model fermions are identified with the negative of their R-charges. As a result, a subset of leptonic R-parity violating operators can be present and are consistent with the $U(1)_R$ symmetry. This model can produce one light Dirac neutrino mass at the tree level without the need of introducing a very small neutrino Yukawa coupling. We analyze the scalar sector of this model in detail paying special attention to the mass of the lightest Higgs boson. One of the sneutrinos might acquire a substantial vacuum expectation value leading to interesting phenomenological consequences. Different sum rules involving the physical scalar masses are obtained and we show that the lightest Higgs boson mass receives a contribution proportional to the square of the neutrino Yukawa coupling $f$. This allows for a 125 GeV Higgs boson at the tree level for $f \sim {\cal O} (1)$ and still having a small tree level mass for the active neutrino. In order to fit the experimental results involving neutrino masses and mixing angles we introduce a small breaking of $U(1)_R$ symmetry, in the context of anomaly mediated supersymmetry breaking. In the presence of this small R-symmetry breaking, light neutrino masses receive contributions at the one-loop level involving the R-parity violating interactions. We also identify the right handed sterile neutrino as a warm dark matter candidate in our model. In the case of R-symmetry breaking, the large $f$ case is characterized by a few hundred MeV lightest neutralino as an unstable lightest supersymmetric particle (LSP) and we briefly discuss the cosmological implications of such a scenario.Comment: Minor corrections in the text, figure 9.6 and 9.7 modified, eq. (66) added, matches with the published version in JHE

Characteristic Wino Signals in a Linear Collider from Anomaly Mediated Supersymmetry Breaking

Though the minimal model of anomaly mediated supersymmetry breaking has been significantly constrained by recent experimental and theoretical work, there are still allowed regions of the parameter space for moderate to large values of $\tan\beta$. We show that these regions will be comprehensively probed in a ${\sqrt s} =1$ TeV $e^+e^-$ linear collider. Diagnostic signals to this end are studied by zeroing in on a unique and distinct feature of a large class of models in this genre: a neutral winolike Lightest Supersymmetric Particle closely degenerate in mass with a winolike chargino. The pair production processes $e^+e^- \to {\tilde e}_L^\pm {\tilde e}_L^\mp$, ${\tilde e}_R^\pm {\tilde e}_R^\mp$, ${\tilde e}_L^\pm {\tilde e}_R^\mp$, ${\tilde \nu} {\bar {\tilde \nu}}$, $\widetilde \chi^0_1 \widetilde \chi^0_2$, $\widetilde \chi^0_2 \widetilde \chi^0_2$ are all considered at $\sqrt s = 1$ TeV corresponding to the proposed TESLA linear collider in two natural categories of mass ordering in the sparticle spectra. The signals analysed comprise multiple combinations of fast charged leptons (any of which can act as the trigger) plus displaced vertices $X_D$ (any of which can be identified by a heavy ionizing track terminating in the detector) and/or associated soft pions with characteristic momentum distributions.Comment: 25 pages, LaTeX, three PS figures and one EPS figur

Vacuum Stability Constraints on the Minimal Singlet TeV Seesaw Model

We consider the minimal seesaw model in which two gauge singlet right handed neutrinos with opposite lepton numbers are added to the Standard Model. In this model, the smallness of the neutrino mass is explained by the tiny lepton number violating coupling between one of the singlets with the standard left-handed neutrinos. This allows one to have the right handed neutrino mass at the TeV scale as well as appreciable mixing between the light and heavy states. This model is fully reconstructible in terms of the neutrino oscillation parameters apart from the overall coupling strengths. We show that the overall coupling strength $y_\nu$ for the Dirac type coupling between the left handed neutrino and one of the singlets can be restricted by consideration of the (meta)stability bounds on the electroweak vacuum. In this scenario the lepton flavor violating decays of charged leptons can be appreciable which can put further constraint on $y_\nu$, for right-handed neutrinos at TeV scale. We discuss the combined constraints on $y_\nu$ for this scenario from the process $\mu \rightarrow e \gamma$ and from the consideration of vacuum (meta)stability constraints on the Higgs self coupling. We also briefly discuss the implications for neutrinoless double beta decay and possible signatures of the model that can be expected at colliders.Comment: One loop effective potential due to heavy neutrino included, 20 pages, 9 figure

Fault Diagnosis and Condition Monitoring of Power Electronic Components Using Spread Spectrum Time Domain Reflectometry (SSTDR) and the Concept of Dynamic Safe Operating Area (SOA)

Title from PDF of title page viewed April 1, 2021Dissertation advisors: Faisal Khan and Yong ZengVitaIncludes bibliographical references ( page 117-132)Thesis (Ph.D.)--School of Computing and Engineering and Department of Mathematics and Statistics. University of Missouri--Kansas City, 2021Fault diagnosis and condition monitoring (CM) of power electronic components with a goal of improving system reliability and availability have been one of the major focus areas in the power electronics field in the last decades. Power semiconductor devices such as metal oxide semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT) are considered to be the most fragile element of the power electronic systems and their reliability degrades with time due to mechanical and thermo-electrical stresses, which ultimately leads to a complete failure of the overall power conversion systems. Therefore, it is important to know the present state of health (SOH) of the power devices and the remaining useful life (RUL) of a power converter in order to perform preventive scheduled maintenance, which will eventually lead to increased system availability and reduced cost. In conventional practice, device aging and lifetime prediction techniques rely on the estimation of the meantime to failure (MTTF), a value that represents the expected lifespan of a device. MTTF predicts expected lifespan, but cannot adequately predict failures attributed to unusual circumstances or continuous overstress and premature degradation. This inability is due in large part to the fact that it considers the device safe operating area (SOA) or voltage and current ride-through capability to be independent of SOH. However, we experimentally proved that SOA of any semiconductor device goes down with the increased level of aging, and therefore, the probability of occurrence of over-voltage/current situation increases. As a result, the MTTF of the device as well as the overall converter reliability reduces with aging. That said, device degradation can be estimated by accomplishing an accurate online degradation monitoring tool that will determine the dynamic SOA. The correlation between aging and dynamic SOA gives us the useful remaining life of the device or the availability of a circuit. For this monitoring tool, spread spectrum time domain reflectometry (SSTDR) has been proposed and was successfully implemented in live power converters. In SSTDR, a high-frequency sine-modulated pseudo-noise sequence (SMPNS) is sent through the system, and reflections from age-related impedance discontinuities return to the test end where they are analyzed. In the past, SSTDR has been successfully used for device degradation detection in power converters while running at static conditions. However, the rapid variation in impedance throughout the entire live converter circuit caused by the fast-switching operation makes CM more challenging while using SSTDR. The algorithms and techniques developed in this project have overcome this challenge and demonstrated that the SSTDR test data are consistent with the aging of the power devices and do not affect the switching performance of the modulation process even the test signal is applied across the gate-source interface of the power MOSFET. This implies that the SSTDR technique can be integrated with the gate driver module, thereby creating a new platform for an intelligent gate-driver architecture (IGDA) that enables real-time health monitoring of power devices while performing features offered by a commercially available driver. Another application of SSTDR in power electronic systems is the ground fault prediction and detection technique for PV arrays. Protecting PV arrays from ground faults that lead to fire hazards and power loss is imperative to maintaining safe and effective solar power operations. Unlike many standard detection methods, SSTDR does not depend on fault current, therefore, can be implemented for testing ground faults at night or low illumination. However, wide variation in impedance throughout different materials and interconnections makes fault location more challenging than fault detection. This barrier was surmounted by the SSTDR-based fault detection algorithm developed in this project. The proposed algorithm was accounted for any variation in the number of strings, fault resistance, and the number of faults. In addition to its general utility for fault detection, the proposed algorithm can identify the location of multiple faults using only a single measurement point, thereby working as a preventative measure to protect the entire system at a reduced cost. Within the scope of the research work on SSTDR-based fault diagnosis and CM of power electronic components, a cell-level SOH measurement tool has been proposed that utilizes SSTDR to detect the location and aging of individual degraded cells in a large series-parallel connected Li-ion battery pack. This information of cell level SOH along with the respective cell location is critical to calculating the SOH of a battery pack and its remaining useful lifetime since the initial SOH of Li-ion cells varies under different manufacturing processes and operating conditions, causing them to perform inconsistently and thereby affect the performance of the entire battery pack in real-life applications. Unfortunately, today’s BMS considers the SOH of the entire battery pack/cell string as a single SOH and therefore, cannot monitor the SOH at the cell level. A healthy battery string has a specific impedance between the two terminals, and any aged cell in that string will change the impedance value. Since SSTDR can characterize the impedance change in its propagation path along with its location, it can successfully locate the degraded cell in a large battery pack and thereby, can prevent premature failure and catastrophic danger by performing scheduled maintenance.Introduction -- Background study and literature review -- Fundamentals of Spread Spectrum Time Domain Reflectometry (SSTDR): A new method for testing electronics live -- Accelerated aging test bench: design and implementation -- Condition monitoring of power switching in live power switching devices in live power electronic converters using SSTDR -- An irradiance-independent, robust ground-fault detection scheme for PV arrays based on SSTDR -- Detection of degraded/aged cell in a LI-Ion battery pack using SSTDR -- Dynamiv safe operating area (SOA) of power semiconductor devices -- Conclusion and future researc